N-Channel Logic Level PWM Optimized UltraFET
Description
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ISL9N316AD3ST
February 2002
ISL9N316AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
014Ω (Typ), VGS = 10V • rDS(ON) = 0.
020Ω (Typ), VGS = 4.
5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1450pF
Applications
• DC/DC converters
DRAIN (FLANGE)
D
GATE SOURCE
G S
TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.
5V) Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 48 28 10 Figure 4 65 0.
43 -55 to 175 A A A A W W/oC
o
Ratings 30 ±20
Units V V
C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.
31 100 52
o
C/W C/W
oC/W o
Package Marking and Ordering Information
Device Marking N316AD Device ISL9N316AD3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units
©2002 Fairchild Semiconductor Corporation
Rev.
B, February 2002
ISL9N316AD3ST
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o 30 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On ...
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