General-Purpose Switching Device
Description
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Ordering number : ENN7685
2SJ657
P-Channl Silicon MOSFET
2SJ657
General-Purpose Switching Device
Features
• • • •
Package Dimensions
unit : mm 2063A
[2SJ657]
10.
0 3.
2
3.
5 7.
2
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
4.
5 2.
8
18.
1
16.
0
5.
6
14.
0
1.
6 1.
2 0.
75
2.
4 0.
7
2.
55
1 2 3 2.
55
2.
4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings --100 ±20 --25 --100 2.
0 35 150 --55 to +150 Unit V V A A W W °C °C
2.
55
2.
55
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-13A Ratings min --100 --1 ±10 -1.
2 21 30 --2.
6 typ max Unit V µA µA V S
Marking : J657
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or...
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