RF LDMOS Wideband Integrated Power Amplifiers
Description
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Freescale Semiconductor Technical Data
Document Number: MW4IC2230N Rev.
6, 5/2006
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications.
It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure.
Its wideband on- chip design makes it usable from 1600 to 2400 MHz.
The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA.
Final Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg.
, f = 2140 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 31 dB Drain Efficiency — 15% ACPR @ 5 MHz = - 45 dBc in 3.
84 MHz Bandwidth Driver Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 0.
4 Watts Avg.
, f = 2140 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 31.
5 dB ACPR @ 5 MHz = - 53.
5 dBc in 3.
84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power • Stable into a 3:1 VSWR.
All Spurs Below - 60 dBc @ 10 mW to 5 W CW Pout.
Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations.
RoHS Compliant.
• In Tape and Reel.
R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230NBR1 MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2230NBR1
CASE 1329A - 03 TO - 272 WB...
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