N-Channel Silicon MOSFET
Description
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Ordering number : ENN8015
2SK3832
2SK3832
Features
• • • • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC Converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1.
VDD=20V, L=100µH, IAV=30A *2.
L≤100µH, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 100 ±20 30 120 2.
5 65 150 --55 to +150 56 30 Unit V V A A W W °C °C mJ A
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 100 1 ±10 1.
2 12.
5 21 46 57 2150 160 110 60 80 2.
6 typ max Unit V
µA µA
V S mΩ mΩ pF pF pF
Marking : K3832
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
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