Transistors
Description
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2SA2005
Transistors
For Audio Amplifier output - TV Velosity Modulation ( 160V, 1.
5A)
2SA2005
Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm)
ÌÑóîîðÚÒ
ïðòð íòî ìòë îòè
Features 1) Electrical characteristics of DC current gain hFE is flat.
2) High breakdown voltage.
(BVCEO= 160V(Min.
), at IC= 1mA) 3) High fT.
(Typ.
150MHz, at VCE= 10V, IE=0.
2A, f=100MHz) 4) Wide SOA.
øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³·¬¬»®
ïòî
ïòí
ðòè îòëì
øï÷ øî÷ øí÷
îòëì
ðòéë
îòê
Applications Power amplifier Velosity modulation
Complements
ÐÒÐ îÍßîððë ÒÐÒ îÍÝëëïï
Absolute maximum ratings (Ta=25 C)
п®¿³»¬»® ݱ´´»½¬±®ó¾¿-» ª±´¬¿¹» ݱ´´»½¬±®ó»³·¬¬»® ª±´¬¿¹» Û³·¬¬»®ó¾¿-» ª±´¬¿¹» ݱ´´»½¬±® ½«®®»²¬ ÜÝ Ð«´-» ͧ³¾±´ ÊÝÞÑ ÊÝÛÑ ÊÛÞÑ ×Ý ×ÝÐ ÐÝ Ì¶ Ì-¬¹ Ô·³·¬–ïêð –ïêð –ë –ïòë –í î îð ïëð –ëë ¬± õïëð ˲·¬ Ê Ê Ê ß ß
ï
Packaging specifications and hFE
п½µ¿¹» ̧°» ¸ÚÛ îÍÝëëïï Û Ý±¼» Þ¿-·½ ±®¼»®·²¹ «²·¬ ø°·»½»-÷ Ì¿°·²¹ – ëðð
hFE values are classified as follows:
׬»³ ¸ ÚÛ Û ïð𠬱 îðð
ݱ´´»½¬±® °±©»® ¼·--·°¿¬·±² Ö«²½¬·±² ¬»³°»®¿¬«®» ͬ±®¿¹» ¬»³°»®¿¬«®»
ï ¬ãïðð³-
ÉøÌ¿ãîëpÝ÷ Éø̽ãîëpÝ÷ pÝ pÝ
Electrical characteristics (Ta=25 C)
п®¿³»¬»® ݱ´´»½¬±®ó»³·¬¬»® ¾®»¿µ¼±©² ª±´¬¿¹» ݱ´´»½¬±®ó¾¿-» ¾®»¿µ¼±©² ª±´¬¿¹» Û³·¬¬»®ó¾¿-» ¾®»¿µ¼±©² ª±´¬¿¹» ݱ´´»½¬±® ½«¬±ºº ½«®®»²¬ Û³·¬¬»® ½«¬±ºº ½«®®»²¬ ݱ´´»½¬±®ó»³·¬¬»® -¿¬«®¿¬·±² ª±´¬¿¹» Þ¿-»ó»³·¬¬»® -¿¬«®¿¬·±² ª±´¬¿¹» ÜÝ ½«®®»²¬ ¹¿·² Ì®¿²-·¬·±² º®»¯«»²½§ ݱ´´»½¬±® ±«¬°«¬ ½¿°¿½·¬¿²½» ͧ³¾±´ ÞÊÝÛÑ ÞÊÝÞÑ ÞÊÛÞÑ ×ÝÞÑ ×ÛÞÑ ÊÝÛø-¿¬÷ ÊÞÛø-¿¬÷ ¸ÚÛ ºÌ ݱ¾ Ó·²ò ̧°ò Ó¿¨ò ˲·¬ –ïêð –ïêð –ë – – – – ïðð – – – – – – – – – – ïëð íë – – – –ïòð –ïòð –ïòð –ïòë îðð – – Ê Ê Ê kß kß Ê Ê – ×Ýã –ï³ß ×Ýã –ëðkß ×Ûã –ëð kß ÊÝÞã –ïêðÊ ÊÛÞã –ìÊ ×Ýñ×Þã –ïßñ –ðòïß ×Ýñ×Þã –ïßñ –ðòïß ÊÝÛã –ëÊô × Ýã –ðòïß Ý±²¼·¬·±²-
Óئ ÊÝÛã –ïðÊô × Ûãðòîß ô ºãïððÓئ °Ú ÊÝÞã –ïðÊ ô ×Ûãðß ô ºãïÓئ
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