TrenchPLUS standard level FET
Description
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BUK7L11-34ARC
TrenchPLUS standard level FET
Rev.
03 — 3 December 2003 Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, integral gate resistor, ESD protection diodes and clamping diodes to protect the MOSFET from avalanching.
1.
2 Features
s ESD and overvoltage protection s Internal gate resistor s Q101 compliant s On-state resistance 8 mΩ (typ).
1.
3 Applications
s 12 V loads s Motors, lamps and solenoids.
1.
4 Quick reference data
s VDSR(CL) = 41 V (typ) s ID ≤ 89 A s RDSon = 8 mΩ (typ) s Ptot ≤ 172 W.
2.
Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78C, simplified outline and symbol Simplified outline
mb
Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
Symbol
d
g
s
MBL521
1 2 3
MBL370
SOT78C (TO-220)
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Philips Semiconductors
BUK7L11-34ARC
TrenchPLUS standard level FET
3.
Ordering information
Table 2: Ordering information Package Name BUK7L11-34ARC TO-220 Description Version Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads.
SOT78C Type number
4.
Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) Tstg Tj IDR IDRM EDS(CL)S peak drain current total power dissipation drain-gate clamping current gate-source clamping current storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs
[2] [3]
Conditions
[1]
Min −55 −55 [1] [1] [2] [3] [2]
Max 34 34 ±20 89 75 63 358 172 50 10 50 +175 +175 89 75 358 465
Unit V V V A A A A W mA mA mA °C °C...
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