N-CHANNEL POWER MOSFET
Description
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N-CHANNEL 55V - 0.
0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET
TYPE STB80NF55-08/-1 STP80NF55-08
s s
STP80NF55-08 STB80NF55-08 STB80NF55-08-1
VDSS 55 V 55 V
RDS(on) <0.
008 Ω <0.
008 Ω
ID 80 A 80 A
3 1
TYPICAL RDS(on) = 0.
0065Ω LOW THRESHOLD DRIVE
3 12
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK TO-263
I2PAK TO-262
3 1 2
TO-220
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(•) ID IDM(••) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 55 55 ± 20 80 57 320 300 2 870 -55 to 175
(1) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Unit V V V A A A W W/°C mJ °C
(•) Current limited by package (••) Pulse width limited by safe operating area.
March 2002
.
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STB80NF55-08/-1 STP80NF55-08
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.
5 62.
5 300 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min.
55 1 10...
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