(ZTE31.5 - ZTE5.1) Voltage Stabilizers
Description
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ZTE1.
5 thru ZTE5.
1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
• Silicon Stabilizer Diodes • Monolithic integrated analog circuits designed for small power stabilizer and limitation circuits, providing low dynamic resistance and high-quality stabilization performance as well as low noise.
In the reverse direction, these devices show the behavior of forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring is to be connected: ZTE1.
5 and ZTE2 to the negative pole of the supply voltage; ZTE2.
4 thru ZTE5.
1 to the positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with the type designation LL1.
5 … LL 5.
1.
min.
1.
083 (27.
5)
max.
.
150 (3.
8)
max.
∅.
079 (2.
0)
Cathode Mark
min.
1.
083 (27.
5)
Dimensions are in inches and (millimeters)
Mechanical Data
Case: DO-35 Glass Case Weight: approx.
0.
13g Packaging codes/options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape, (52mm tape), 20K/box
max.
∅.
020 (0.
52)
DataShee
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Maximum Ratings
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Operating Current (see Table “Characteristics”) Inverse Current Power dissipation at Tamb = 25°C Junction temperature Storage temperature range IF Ptot TJ TS 100 300(1) 150 – 55 to +150 mA mW °C °C
Electrical and Thermal Characteristics
Parameter Forward Voltage at IF = 10 mA Temperature Coefficient of the stabilized voltage at IZ = 5 mA ZTE1.
5, ZTE2 ZTE2.
4, ZTE5.
1
(TA = 25°C unless otherwise noted)
Symbol VF
Min.
– – – –
Typ.
– –26 –34 –
Max.
1.
1 – – 400(1)
Unit V 10 /°C 10–4/°C °C/W
–4
αVZ αVZ
RθJA
Thermal resistance junction to ambient air
DataSheet4U.
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Document Number 88425 02-May-02 www.
vishay.
com 1
DataSheet 4 U .
com
www.
DataSheet4U.
com
ZTE1.
5 thru ZTE5.
1
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type ZTE1.
5 ZTE2 ZTE2.
4 ZTE2.
7 ZTE3 ZTE3.
3 ...
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