N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Description
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STP6N25 STP6N25FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STP6N25 STP6N25FI
s s s s s
VDSS 250 V 250 V
R DS(on) <1Ω <1Ω
ID 6A 4A
TYPICAL RDS(on) = 0.
7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
1 2
3
APPLICATIONS TO-220 ISOWATT220 s HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR INTERNAL SCHEMATIC DIAGRAM TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT DataSheet4U.
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ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STP6N25 V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature
o
Value STP6N25FI 250 250 ± 20 6 4 24 70 0.
56 -65 to 150 150 4 2.
6 24 35 0.
28 2000
Unit
V V V A A A W W/o C
o o
C C
(•) Pulse width limited by safe operating area
June 1993
1/10
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STP6N25/FI
THERMAL DATA
TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.
79 62.
5 0.
5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 3.
57
o o o
C/W C/W C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-...
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