NPN SILICON HIGH FREQUENCY TRANSISTOR - California Eastern Labs
Description
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NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.
2 dB at 2 GHz HIGH IP3: NF = 27 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.
59 mm.
Flat Lead Style for better RF performance.
M04
NE663M04
DESCRIPTION
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.
With a typical transition frequency of 19 GHz the NE663M04 is usable in applications from 100 MHz to 5 GHz.
The NE663M04 provides excellent low voltage/low current performance.
NEC's low profile/flat lead style "M04" package is ideal for today's portable wireless applications.
The NE663M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCE = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 10 mA GHz dB dB dBm dBm dB pF Gain Bandwidth at VCE = 3 V, IC = 90 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 50 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 50 mA, f = 2 GHz Output Power at 1 dB compression point at VCE = 2 V, IC = 70 mA5, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 70 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZIN = ZOPT Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz UNITS µA µA 50 13 8 70 15 11 15 17 27 1.
2 0.
5 1.
7 0.
75 MIN NE663M04 2SC5509 M04 TYP MAX 0.
6 0.
6 100
DC
IEBO hFE fT |S21E|2 MSG P1dB IP3 NF Cre
Notes: 1.
Electronic Industrial Association of Japan.
2.
Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.
Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
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