(BC171 - BC174) NPN Silicon Planar Transistors
Description
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.
2
NPN SILICON PLANAR TRANSISTORS
BC171 , A, B BC172, A, B, C BC174, A, B TO-92 Plastic Package
C
BE
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC174 BC171 65 80 45 50 6 100 350 2.
8 1.
0 8.
0 -55 to +150 BC172 25 30 UNIT V V V mA mW mW/ºC W mW/ºC ºC
Rth(j-a) Rth(j-c)
357 125
ºC/W ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Breakdown Voltage BC174 BC171 BC172 Emitter Base Breakdown Voltage ALL Collector Cut off Current BC174 BC171 BC172 ICES VCE=70V, VBE = 0 VCE=50V, VBE = 0 VCE=35V, VBE = 0 VCE=30V, VBE = 0, Ta= 125ºC
Continental Device India Limited
VALUE TYP
MAX
UNIT
BVCEO
IC=2mA,IB=0 65 45 25 V V V
BVEBO
IE=100µA, IC=0 6 15 15 15 4 V nΑ nΑ nΑ µA
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Data Sheet
Page 1 of 4
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NPN SILICON PLANAR TRANSISTORS
BC171 , A, B BC172, A, B, C BC174, A, B TO-92 Plastic Package
DESCRIPTION
SYMBOL TEST CONDITION MIN
VALUE TYP
MAX
UNIT
DC Current Gain BC171A, 2A, 4A BC171B, 2B, 4B BC172C
hFE
VCE=5V,IC=10µA 90 150 270 VCE=5V,IC=2mA 120 120 120 120 180 380 VCE=5V,IC=100mA 120 180 300 450 800 800 220 460 800
BC174 BC171 BC172 BC171A, 2A, 4A BC171B, 2B, 4B BC172C BC171A, 2A, 4A BC171B, 2B, 4B BC172C Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter on Voltage DYNAMIC CHARACTERISTICS Transition Frequency BC171 BC172 BC174 Output Capacitance Input Capacitance Cob Cib fT IC=10mA, VCE=5V ...
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