LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Description
STN851
Low voltage fast-switching NPN power transistor
Features
■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed
Applications
■ Emergency lighting ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching
applications
Description
The device is manufactured in Planar Technology with "Base Island" layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
4 3
2 1
SOT-223
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
Marking
STN851
N851
March 2009
Package SOT-223
Rev 7
Packaging Tape and reel
1/10
www.
st.
com
10
Electrical ratings
1 Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
VCBO VCEO VEBO
IC ICM IB IBM Ptot Tstg TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tamb = 25 °C Storage temperature Max.
operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Rthj-amb Thermal resistance junction-ambient (1)
1.
Device mounted on a p.
c.
b.
area of 1 cm2
STN851
Value 150 60
7 5 10 1 2 1.
6 -65 to 150 150
Unit V V V A A A A W °C °C
Value 78
Unit °C/W
2/10
STN851
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current (IE = 0)
VCB = 120 V VCB = 120 V Tc = 100 oC
IEBO
Emitter cut-off current (IC = 0)
V(BR)CBO
Collector-base breakdown voltage (IE = 0)
Collector-emitter
V(BR)CEO(1) breakdown voltage (IB = 0)
V(BR)EBO
Emitter-base breakdown voltage (IC = 0)
VCE(sat) (1)
Collector-emitter saturation voltage
VEB = 7 V
IC = 100 µA
IC = 10 mA
IE = 100 µA IC = 100 mA IC = 1 A_ _ IC = 2 A IC = 5 A_ _
IB = 5 mA IB = 50 mA...
Similar Datasheet
