N-Channel MOSFET
Description
STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.
1Ω - 4.
6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP5NC90Z/FP STB5NC90Z/-1
s s
VDSS 900V 900V
RDS(on) < 2.
5Ω < 2.
5Ω
ID 4.
6 A 4.
6 A
1 3
s s s
TYPICAL RDS(on) = 2.
1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D²PAK TO-220
3 1 2
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
s
I²PAK (Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature -–65 to 150 150
(1)ISD ≤4.
6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (*).
Limited only by maximum temperature allowed
Value STP(B)5NC90Z(-1) 900 900 ± 25 4.
6 2.
9 18 125 1 ±50 3 3 2000 4.
6(*) 2.
9(*) 18 40 0.
32 STP5NC90ZFP
Unit V V V A A A W W/°C mA KV V/ns V °C °C 1/13
(•)Pulse width limited by safe operating area
December 2002
STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1
THERMAL DATA
TO-220 / D²PAK / I²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Solder...
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