N-Channel MOSFET
Description
STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.
3Ω - 5.
5A TO-220/FP/D2PAK/I2PAK PowerMesh™ II MOSFET
TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1
s s s s s
VDSS 500 500 500 500 V V V V
RDS(on) < 1.
5Ω < 1.
5Ω < 1.
5Ω < 1.
5Ω
ID 5.
5A 5.
5A 5.
5A 5.
5A
3 1
TYPICAL RDS(on) = 1.
3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
D2PAK
TO-220FP
3 12
DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
I2PAK
INTERNAL SCHEMATIC DIAGRAM
Value STP5NC50 STB5NC50/-1 STP5NC50FP
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 5.
5 3.
5 22 100 0.
8
500 500 ±30 5.
5(*) 3.
5(*) 22 35 0.
28 3.
5 2500 -55 to 175 -65 to 175
(*)Limited only by maximum temperature allowed
V V V A A A W W/°C V/ns V °C °C
(•)Pulse width limited by safe operating area (1)ISD ≤5.
5A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
December 2002
1/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
THERMAL DATA
TO-220 D 2PAK I2 PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
25 62.
5 300 TO-220FP 3.
57 ° C/W ° C/W °C
AVALANCHE CHARACTERISTI...
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