Silicon NPN triple diffusion planar type Transistor
Description
Power Transistors
2SC5926
Silicon NPN triple diffusion planar type
Unit: mm
4.
2±0.
2
For power amplification ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
10.
0±0.
2
1.
0±0.
2
90˚ 2.
5±0.
1
5.
0±0.
1
13.
0±0.
2
1.
2±0.
1 1.
48±0.
2
C 1.
0 2.
25±0.
2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 15 2.
0 150 −55 to +150 °C °C Unit V V V A A W
18.
0±0.
5 Solder Dip
0.
65±0.
1 0.
65±0.
1 0.
35±0.
1 1.
05±0.
1 0.
55±0.
1 2.
5±0.
2 2.
5±0.
2 1 2 3 0.
55±0.
1
1: Base 2: Collector 3: Emitter MT-4-A1 Package
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Symbol VCEO ICBO ICEO IEBO hFE1 *2 hFE2 Collector-emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.
5 A VCE = 4 V, IC = 3 A IC = 1 A, IB = 20 mA IC = 1 A, Resistance loaded IB1 = 0.
1 A, IB2 = − 0.
1 A VCC = 50 V 0.
2 1.
5 0.
1 500 100 0.
7 V µs µs µs Min 60 100 100 100 2 300 Typ Max Unit V µA µA µA
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Pulse measurement *2: Rank classification Rank hFE1 Q 500 to 1 500 P 1 300 to 2 300
Publication date: November 2004
SJD00326AED
1
Request for your special attention and precautions in using th...
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