GaAs/GaAlAs IR Emitting Diode
Description
U IR Emitting Diode in ø 3 mm (T–1) GaAs/GaAlAs 4 t Packageee at .
D w
Description
TSAL4400 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
.
c
om
TSAL4400
Vishay Telefunken
h S a
94 8488
w
w
Features
D Extra high radiant power D Low forward voltage D Suitable for high pulse current operation D Standard T–1 (ø 3 mm) package D Angle of half intensity ϕ = ± 25° D Peak wavelength l p = 940 nm D High reliability D Good spectral matching to Si photodetectors
Applications
Infrared remote control units Free air transmission systems Infrared source for optical counters and card readers
Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient
w
w
w
t a .
D
S a
e h
U 4 t e
.
c
m o
Test Conditions
tp/T = 0.
5, tp = 100 m s tp = 100 m s
t
x 5sec, 2 mm from case
Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
Document Number 81006 Rev.
3, 20-May-99
www.
vishay.
de • FaxBack +1-408-970-5600 1 (5)
w
w
w
.
D
a
S a t
Value 5 100 200 1.
5 210 100 –55.
.
.
+100 –55.
.
.
+100 260 350
e e h
U 4 t
Unit V mA mA A mW °C °C °C °C K/W
m o .
c
TSAL4400
Vishay Telefunken Basic Characteristics
Tamb = 25_ C Parameter Forward Voltage g Temp.
Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp.
Coefficient of f e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp.
Coef...
Similar Datasheet
