High Power Infrared Emitting Diode - Vishay Siliconix
Description
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TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8389
DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package.
FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 10° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: For definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Infrared remote control units with high power reqirements • Free air transmission systems • Infrared source for optical counters and card readers • IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT TSAL6100
Ie (mW/sr) 170
Note • Test conditions see table “Basic Characteristics”
ϕ (deg) ± 10
λp (nm) 940
ORDERING INFORMATION
ORDERING CODE TSAL6100
Note • MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
tp/T = 0.
5, tp = 100 μs tp = 100 μs
t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB
VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
tr (ns) 15
PACKAGE FORM T-1¾
VALUE 5
100 200 1.
5 160 100 -40 to +85 -40 to +100 260 230
UNIT V mA mA A
mW °C °C °C °C K/W
Rev.
1.
8, 13-Mar-14
1 Document Number: 81009
For technical questions, contact: emittertechsupport@vishay.
com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJE...
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