GaAs/GaAlAs IR Emitting Diode
Description
U GaAs/GaAlAs 4 t IR Emitting Diode in ø 5 mm (T–1¾ ) Package
Description
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TSAL7300
Vishay Telefunken
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TSAL7300 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
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94 8389
Features
D Extra high radiant power and radiant intensity D Low forward voltage D Suitable for high pulse current operation D Standard T–1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 940 nm D High reliability D Good spectral matching to Si photodetectors
Applications
Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors
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Document Number 81013 Rev.
1, 20-May-99
www.
vishay.
de • FaxBack +1-408-970-5600 1 (6)
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TSAL7300
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1,5 210 100 –55.
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+100 –55.
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+100 260 350 Unit V mA mA A mW °C °C °C °C K/W
tp/T = 0.
5, tp = 100 m s tp = 100 m s
t
x 5sec, 2 mm from case
Basic Characteristics
Tamb = 25_ C Parameter Forward Voltage g Temp.
Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp.
Coefficient o...
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