GaAs/GaAlAs IR Emitting Diode - Vishay Siliconix
Description
U GaAs/GaAlAs 4 t IR Emitting Diode in ø 5 mm (T–1¾ ) Package
Description
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TSAL7600
Vishay Telefunken
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TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
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Features
D Extra high radiant power and radiant intensity D High reliability D Low forward voltage D Suitable for high pulse current operation D Standard T–1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 30° D Peak wavelength l p = 940 nm D Good spectral matching to Si photodetectors
Applications
Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors
Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient
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94 8494
Test Conditions
tp/T = 0.
5, tp = 100 m s tp = 100 m s
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x 5sec, 2 mm from case
Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA
Value 5 100 200 1.
5 210 100 –55.
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+100 –55.
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+100 260 350
Document Number 81015 Rev.
2, 20-May-99
www.
vishay.
de • FaxBack +1-408-970-5600 1 (5)
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Unit V mA mA A mW °C °C °C °C K/W
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TSAL7600
Vishay Telefunken Basic Characteristics
Tamb = 25_ C Parameter Forward Voltage g Temp.
Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp.
Coefficien...
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