2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
Description
E2G1047-18-25
¡ Semiconductor MSM56V16800D/DH
¡ Semiconductor
ThisMSM56V16800D/DH version: Mar.
1998
Pr el im in ar y
2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.
The device operates at 3.
3 V.
The inputs and outputs are LVTTL compatible.
FEATURES
• • • • • • • Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank ¥ 1,048,576-word ¥ 8-bit configuration 3.
3 V power supply, ± 0.
3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles/64 ms Programmable data transfer mode – CAS latency (1, 2, 3) – CAS latency (2, 3)*1 – Burst length (1, 2, 4, 8, full page) – Burst length (1, 2, 4, 8)*1 – Data scramble (sequential, interleave) *1 : H version only.
• CBR auto-refresh, Self-refresh capability • Package: 44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.
80-K) (Product : MSM56V16800D/DH-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15 Max.
Frequency 100 MHz 83 MHz 66 MHz Access Time (Max.
) tAC2 9 ns 14 ns 9 ns tAC3 9 ns 10 ns 9 ns
1/30
¡ Semiconductor PIN CONFIGURATION (TOP VIEW)
MSM56V16800D/DH
VCC DQ1 VSSQ DQ2 VCCQ DQ3 VSSQ DQ4 VCCQ NC NC WE CAS RAS CS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
DQM DQi VCC VSS VCCQ VSSQ NC
44 VSS 43 DQ8 42 VSSQ 41 DQ7 40 VCCQ 39 DQ6 38 VSSQ 37 DQ5 36 VCCQ 35 NC 34 NC 33 DQM 32 CLK 31 CKE 30 NC 29 A9 28 A8 27 A7 26 A6 25 A5 24 A4 23 VSS
44-Pin Plastic TSOP (II) (K Type)
Pin Name CLK CS CKE A0 - A10 A11 RAS CAS WE
Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable
Pin Name
Function Data Input/Output Mask Data Input/Output Power Supply (3.
3 V) Ground (0 V) Data Output Power Supply (3.
3 V) Data Output Ground (0 V) No Connection
Note:
The ...
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