2SB1063
Description
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2SB1063
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD1499 ■ Features
• Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3
Unit: mm
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2
4.
2±0.
2
4.
2±0.
2 2.
7±0.
2
7.
5±0.
2
φ 3.
1±0.
1
Solder Dip (4.
0)
1.
4±0.
1
1.
3±0.
2 0.
5+0.
2 –0.
1
14.
0±0.
5
0.
8±0.
1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −100 −100 −5 −5 −8 40 2.
0 150 −55 to +150 °C °C Unit V V V A A W
2.
54±0.
3 5.
08±0.
5
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VBE ICBO IEBO hFE1 hFE2 * hFE3 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions VCE = −5 V, IC = −3 A VCB = −100 V, IE = 0 VEB = −3 V, IC = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −1 A VCE = −5 V, IC = −3 A IC = −3 A, IB = − 0.
3 A VCE = −5 V, IC = − 0.
5 A, f = 1 MHz VCB = −10 V, IE = 0, f = 1 MHz 20 170 20 40 20 −2 V MHz pF 200 Min Typ Max −1.
8 −50 −50 Unit V µA µA
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 R 40 to 80 Q 60 to 120 P 100 to 200
Publication date: February 2003
SJD00039AED
1
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PC Ta
80
(1)TC=Ta (2)With a 100×100×2mm Al heat...
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