(MUR8100E / MURP810) 8A / 1000V Ultrafast Diodes
Description
MUR8100E, RURP8100
Data Sheet December 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/ clamping diodes...
Fairchild Semiconductor
MURP810 PDF File
Similar Datasheet