N-CHANNEL HEXFET MOSFETTECHNOLOGY
Description
PD - 90712B
POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM360
IRFM360 400V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
RDS(on)
0.
20 Ω
ID
23A
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink.
This improves thermal efficiency and reduces drain capacitance.
TO-254AA
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 23 14 92 250 2.
0 ±20 980 23 25 4.
0 -55 to 150 300 ( 0.
063 in.
(1.
6mm) from case for 10s) 9.
3 (Typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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1
2/11/02
IRFM360
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS/ ∆ T J Temperature Coefficient of Breakdown Volt...
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