DRAM Module
Description
DRAM MODULE
KMM372V80(8)3BK/BS
KMM372V80(8)3BK/BS Fast Page Mode 8Mx72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 3.
3V
GENERAL DESCRIPTION
The Samsung KMM372V80(8)3B is a 8Mx72bits Dynamic RAM high density memory module.
The Samsung KMM372V80(8)3B consists of nine CMOS 8Mx8bits DRAMs in SOJ/TSOP-II 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glass-epoxy substrate.
A 0.
1 or 0.
22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
The KMM372V80(8)3B is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets.
FEATURES
• Part Identification Part number KMM372V803BK KMM372V803BS KMM372V883BK KMM372V883BS • • • • • • • • PKG SOJ TSOP SOJ TSOP Ref.
4K 8K CBR Ref.
ROR Ref.
4K/64ms 4K/64ms 8K/64ms
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
18ns 20ns
tRC
90ns 110ns
tPC
35ns 40ns
Fast Page Mode Operation CAS-before-RAS Refresh capability RAS-only and Hidden refresh capability LVTTL compatible inputs and outputs Single 3.
3V±0.
3V power supply JEDEC standard pinout & Buffered PDpin Buffered input except RAS and DQ PCB : Height(1250mil), single sided component
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS RSVD RSVD VCC W0 CAS0 29 *CAS2 57 30 RAS0 58 31 OE0 59 60 VSS 32 61 A0 33 62 A2 34 63 A4 35 64 A6 36 65 A8 37 66 A10 38 67 A12 39 68 VCC 40 41 RFU 69 42 RFU 70 71 VSS 43 44 OE2 72 45 RAS2 73 46 CAS4 74 47 *CAS6 75 76 W2 48 77 VCC 49 50 RSVD 78 51 RSVD 79 52 DQ18 80 53 DQ19 81 82 VSS 54 55 DQ20 83 56 DQ21 84 DQ22 DQ23 VCC DQ24 RFU RFU RFU RFU DQ25 DQ26 DQ27 VSS DQ28 DQ29 DQ30 DQ31 VCC DQ32 DQ33 DQ34 DQ35 VSS PD1 PD3 PD5 PD7 ID0 VCC 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Back VSS DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 DQ...
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