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PMF290XN

NXP

N-channel mTrenchMOS extremely low level FET


PMF290XN
PMF290XN

PDF File PMF290XN PDF File


Description
PMF290XN N-channel µTrenchMOS™ extremely low level FET Rev.
01 — 27 February 2004 M3D102 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.
3 Applications s Driver circuits s Switching in portable appliances.
1.
4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 0.
56 W s ID ≤ 1 A s RDSon ≤ 350 mΩ.
2.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT323 (SC-70), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBC870 Simplified outline 3 Symbol d MBB076 s SOT323 (SC-70) Philips Semiconductors PMF290XN N-channel µTrenchMOS™ extremely low level FET 3.
Ordering information Table 2: Ordering information Package Name PMF290XN SC-70 Description Plastic surface mounted package; 3 leads Version SOT323 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 4.
5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.
5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 20 20 ±12 1 0.
63 2 0.
56 +150 +150 0.
47 0.
94 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 12767 © Koninklijke Philips Electronics N.
V.
2004.
All rights reserved.
Product data Rev.
01 — 27 February 2004 2 of 12 Philips Semiconductors PMF290XN N-channel µTrenchMOS™ extremely low level FET 120 Pder (%) 80 03aa17 ...



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