Low VF (MEGA) Schottky barrier diode
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D302
PMEG6010AED Low VF (MEGA) Schottky barrier diode
Product specification 2003 Jun 27
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
FEATURES • Low switching losses • Very high surge current absorption capability • Fast recovery time • Guard ring protected • Plastic SMD package.
APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection.
handbook, halfpage 6
PMEG6010AED
PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION
5
4
GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package.
1 2 3
MHC634
1, 2 5, 6
3, 4
Marking code: M4.
Fig.
1
Simplified outline SOT457 (SC-74) and symbol.
LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 60134).
SYMBOL VR IF IFSM IRSM Tstg Tj Note 1.
Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for cathode 6 cm2.
PARAMETER continuous reverse voltage continuous forward current Tamb ≤ 25 °C; note 1 non-repetitive peak forward current t = 8 ms; square wave non-repetitive peak reverse current tp = 100 µs storage temperature junction temperature CONDITIONS − − − − −65 − MIN.
1 17.
5 0.
5 +150 +150 MAX.
60 V A A A °C °C UNIT
2003 Jun 27
2
Philips Semiconductors
Product specification
Low VF (MEGA) Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.
SYMBOL VF IR PARAMETER continuous forward voltage continuous reverse current IF = 1 A VR = 60 V; see Fig.
3 VR = 60 V; Tj = 100 °C; notes 1 and 2 Cd Notes 1.
Pulse test: tp = 300 µs; δ = 0.
02.
diode capacitance CONDITIONS IF = 0.
1 A
PMEG6010AED
MAX.
400 650 350 8 mV mV µA mA pF
UNIT
VR = 4 V; f = 1 MHz; see Fig.
4 60
2.
For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses.
THERMAL CHARACTE...
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