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SSP3N80A

Fairchild Semiconductor

Advanced Power MOSFET


Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 3.800 Ω (Typ.) 1 2 3 SSP3N80A BVDSS = 800 V RDS(on) = 4.8 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb...



Fairchild Semiconductor

SSP3N80A

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