SIPMOS Small-Signal Transistor
Description
BSS 101
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.
8.
.
.
2.
0V
Pin 1 S Type BSS 101 Type BSS 101 BSS 101
Pin 2 G Marking SS 101
Pin 3 D
VDS
240 V
ID
0.
13 A
RDS(on)
16 Ω
Package TO-92
Ordering Code Q62702-S493 Q62702-S636
Tape and Reel Information E6288 E6325
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.
13
TA = 33 °C
DC drain current, pulsed
IDpuls
0.
52
TA = 25 °C
Power dissipation
Ptot
0.
63
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
BSS 101
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit
V(BR)DSS
240 1.
4 0.
1 2 1 12 15 2 1 60 30 10
V
VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.
8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
µA nA nA Ω 16 26
VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.
13 A VGS = 4.
5 V, ID = 0.
13 A
Semiconductor Group
2
12/05/1997
BSS 101
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit
gfs
0.
06 0.
16 60 8 3.
5 -
S pF 80 12 5 ns 5 8
VDS≥ 2 * ID * RDS(on)max, ID = 0.
13 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 M...
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