PNP General Purpose Amplifier
Description
MPS6523
Discrete POWER & Signal Technologies
MPS6523
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68.
See PN200 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25 45 4.
0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
MPS6523 625 5.
0 83.
3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
MPS6523
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 0.
5 mA, IB = 0 I E = 10 µ A, IC = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 60 ° C 25 4.
0 50 1.
0 V V nA µA
ON CHARACTERISTICS*
hFE VCE( sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 10 V, IC = 100 µ A VCE = 10 V, IC = 2.
0 mA IC = 50 mA, IB = 5.
0 mA 150 300 600 0.
5 V
SMALL SIGNAL CHARACTERISTICS
Cob NF Output Capacitance Noise Figure VCB = 10 V, f = 100 kHz VCE = 5.
0 V, IC = 10 µ A, RS = 10 kΩ , BW =10 Hz to 15.
7 kHz 4.
0 3.
0 pF dB
*Pulse Tes...
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