INSULATED GATE BIPOLAR TRANSISTOR
Description
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PD - 9.
764
IRGPH40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig.
1 for Current vs.
Frequency curve
G E C
Fast Speed IGBT
VCES = 1200V VCE(sat) ≤ 3.
3V
@VGE = 15V, I C = 17A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200 29 17 58 58 ±20 15 160 65 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
— — — —
Typ.
— 0.
24 — 6 (0.
21)
Max.
0.
77 — 40 —
Units
°C/W g (oz)
C-273
Revision 0
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IRGPH40F
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff.
of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff.
of Threshold Vol...
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