Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.)
1
IRFP250A
BVDSS = 200 V RDS(on) = 0.085 Ω ID = 32 A
TO-3P
2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
S...
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