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BB301M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Description

BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 ...

Hitachi

BB301M PDF File

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