Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.
) @ VDS = -250V ν Lower RDS(ON) : 3.
15 Ω (Typ.
)
SFR/U9214
BVDSS = -250 V RDS(on) = 4.
0 Ω ID = -1.
53 A
D-PAK
2 1 3 1
I-PAK
2
3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * o o
Value -250 -1.
53 -0.
97
1 O
Units V A A V mJ A mJ V/ns W W W/ C
o
-6.
1 + _ 30 110 -1.
53 1.
9 -4.
8 2.
5 19 0.
15 - 55 to +150
O 1 O 1 O 3 O
2
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8＂ from case for 5-seconds
o
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
6.
58 50 110
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev.
B1
2001 Fairchild Semiconductor Corporation
SFR/U9214
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller “) Charge Min.
Typ.
Max.
Units -250 --2.
0 ------------------0.
21 ------1.
0 225 35 13 10 18 24 11 9...
Similar Datasheet
