Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.)
SFM9110
BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A
SOT-223
2
1 3
1. Gate 2. Drain 3. Source
Absolu...
