PNP Transistor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN2907A PNP switching transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES • High current (max.
600 mA) • Low voltage (max.
60 V).
APPLICATIONS • Switching and linear amplification.
DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package.
NPN complement: PN2222A.
1 handbook, halfpage
PN2907A
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2 3
1 2 3
MAM280
Fig.
1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base CONDITIONS − − − − 100 200 − MIN.
MAX.
−60 −60 −600 500 300 − 365 MHz ns UNIT V V mA mW
1997 May 05
2
Philips Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
PN2907A
MAX.
−60 −60 −5 −600 −800 −200 500 +150 150 +150
UNIT V V V mA mA mA mW °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE =...
Similar Datasheet
