Phototransistor Detector - NTE
Description
NTE3032 Phototransistor Detector NPN–Si, Visible & IR
Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications or any design requiring radiation sensitivity and stable characteristics.
Features: D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application D Minimum Light Current: 8mH @ H = 5mW/cm2 D External Base for Added Control D Annular Passivated Structure for Stability and Reliability D Popular TO18 Type Package for Easy Handling and Mounting Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO .
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30V Collector–Base Voltage, VCBO .
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80V Emitter–Collector Voltage, VECO .
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5V Total Device Dissipation, PD .
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150mW Derate Above 25°C .
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1.
43mW/°C Operating Junction Temperature Range, TJ .
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–65° to +150°C Storage Temperature Range, Tstg .
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–65° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Static Characteristics Collector Dark Current Collector–Base Breakdown Voltage Emitter–Collector Breakdown Voltage Optical Characteristics Light Current Photo Current Rise Time Photo Current Fall Time IL tr tf VCC = 5V, RL = 100Ω, Note 1 RL = 100Ω, IL = 1mA...
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