General Purpose Transistor
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3904LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT3904LT1
Motorola Preferred Device
3
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.
0 200 Unit Vdc Vdc Vdc mAdc
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3) (IC = 1.
0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.
0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.
0 Vdc) 1.
FR– 5 = 1.
0 0.
75 0.
062 in.
2.
Alumina = 0.
4 0.
3 0.
024 in.
99.
5% alumina.
3.
Pulse Test: Pulse Width 300 ms, Duty Cycle 2.
0%.
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.
0 — — — — — 50 50 Vdc Vdc Vdc nAdc nAdc
v
v
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1996
1
MMBT3904LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (1) (IC = 0.
1 mAdc, VCE = 1.
0 Vdc) (IC = 1.
0 mAdc, VCE = 1.
0 Vdc) (IC = 10 mAdc, V...
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