32K x 18 Bit BurstRAM Synchronous Fast Static RAM
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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32K x 18 Bit BurstRAM™ Synchronous Fast Static RAM
With Burst Counter and Self–Timed Write
The MCM67B518 is a 589,824 bit synchronous fast static random access memory designed to provide a burstable, high–performance, secondary cache for the i486™ and Pentium™ microprocessors.
It is organized as 32,768 words of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS technology.
The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive capability outputs onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications.
Synchronous design allows precise cycle control with the use of an external clock (K).
BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.
Addresses (A0 – A14), data inputs (D0 – D17), and all control signals except output enable (G) are clock (K) controlled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either address status processor (ADSP) or address status cache controller (ADSC) input pins.
Subsequent burst addresses can be generated internally by the MCM67B518 (burst sequence imitates that of the i486 and Pentium) and controlled by the burst address advance (ADV) input pin.
The following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the clock (K) input.
This feature eliminates complex off–chip write pulse generation and provides increased flexibility for incoming signals.
Dual write enables (LW and UW) are provided to allow individually writeable bytes.
LW controls DQ0 – DQ8 (the lower bits), while UW controls DQ9 – DQ17 (the upper bits).
This device is ideally suited for systems that require wide data bus widths and cache memory.
See Figure 2 for applications information.
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