Ultrahigh-Speed Switching Applications
Description
Ordering number : ENN7077
MCH6611
P-Channel Silicon MOSFET
MCH6611
Ultrahigh-Speed Switching Applications
Preliminary Features
• • • •
Package Dimensions
Low ON-resistance.
unit : mm Ultrahigh-speed switching.
2173A 4V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
0.
25
[MCH6611]
0.
3 0.
15
4
2.
1 1.
6
5
6
0.
25
3 2 0.
65
2.
0
0.
07
1
6
5
4
0.
85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm 2!0.
8mm)1unit Conditions
1
2
3
Ratings --50 ± 20 -0.
28 --1.
1 0.
8 150 --55 to +150
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--100µA VDS=-10V, ID=--70mA ID=--70mA, VGS=-10V ID=--40mA, VGS=-4V Ratings min --50 --10 ± 10 --1 120 160 4.
7 6.
5 6.
1 9.
1 --2.
5 typ max Unit V µA µA V mS Ω Ω
Marking : FK
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failu...
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