Advanced Power MOSFET
Description
Advanced Power MOSFET
IRFU410A
IRFU410A
BVDSS = 520 V RDS(on) = 10.
0 Ω ID = 1.
2 A
TO-220
Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds
Ο Ο Ο
Value 520 1.
2 0.
8
1 O
Units V A A V mJ A mJ V/ns W W/ C
Ο
4.
0 + _ 20 40 1.
2 4.
2 3.
5 42 0.
33 -55 to +150
O 1 O 1 O 3 O
2
Ο
C
300
Thermal Resistance
Symbol RθJC Rθ CS Rθ JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-1.
7 -Max.
3.
0 -110
Ο
Units
C /W
Rev.
B
©1999 Fairchild Semiconductor Corporation
IRFU410A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 520 -2.
0 -----------------0.
60 ------0.
70 -4.
5 9.
5 --4.
0 100 -100 10 1000 10 -300 80 40 20 30 60 45 21 --nC VDS=416V,VGS=10V,ID=1.
2A See Fig 6 & Fig ...
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