Triac
Description
MAC12HCD, MAC12HCM, MAC12HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full–wave, silicon gate–controlled devices are needed.
• Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 • High Commutating di/dt and High Immunity to dv/dt @ 125°C • Minimizes Snubber Networks for Protection • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 80°C • High Surge Current Capability – 100 Amperes • Industry Standard TO-220AB Package for Ease of Design • Glass Passivated Junctions for Reliability and Uniformity • Device Marking: Logo, Device Type, e.
g.
, MAC12HCD, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12HCD MAC12HCM MAC12HCN On-State RMS Current (All Conduction Angles; TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.
33 ms) Peak Gate Power (Pulse Width ≤ 1.
0 µs, TC = 80°C) Average Gate Power (t = 8.
3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg 12 100 41 16 0.
35 –40 to +125 –40 to +150 A A A2sec 1 Watts Watts °C 2 3 4 TO–220AB CASE 221A STYLE 4 Value Unit Volts
http://onsemi.
com
TRIACS 12 AMPERES RMS 400 thru 800 VOLTS
MT2 G
MT1
4
1
2
3
PIN ASSIGNMENT
Main Terminal 1 Main Terminal 2 Gate Main Terminal 2
ORDERING INFORMATION
°C Device MAC12HCD MAC12HCM MAC12HCN Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail
(1) VDRM and VRRM for all types can be applied on a continuous basis.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are recommended choices for future use and best overal...
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