Silicon planer type (cathode common)
Description
Fast Recovery Diodes (FRD)
MA111
MA650
Silicon planer type (cathode common)
0.
7±0.
1
For switching s Features
q q
Unit : mm
10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2
Low forward voltage V F Fast reverse recovery time trr
16.
7±0.
3
q
High reverse voltage VR
7.
5±0.
2
ø3.
1±0.
1
4.
2±0.
2
1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 -0.
1
+0.
2
14.
0±0.
5
Solder Dip
4.
0
2.
54±0.
25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
5.
08±0.
5
Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg
Rating 200 200 10 60 – 40 to +150 – 40 to +150
Unit V V A A ˚C ˚C
1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package)
1 2 3
s Internal Connection
1
2
3
s Electrical Characteristics (Ta= 25˚C)
Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time Thermal resistance Symbol IRRM1 IRRM2 VF trr* Rth(j-c) Rth(j-a) Condition VRRM= 200V, TC= 25˚C VRRM= 200V, Tj=150˚C IF= 5A, TC= 25˚C IF=1A, IR=1A Flat direct current between junction and case min typ max 100 6 1 100 3 63 Unit µA mA V ns ˚C/W ˚C/W
Note 1.
Rated input/output frequency : 10MHz 2.
* trr measuring circuit
50Ω D.
U.
T 5.
5Ω
50Ω IF IR
trr
0.
1 × IR
Fast Recovery Diodes (FRD)
MA650
IF – VF
100 TC=25˚C
108
IR – VR
30
PD(AV) – IF(AV)
100˚C
IR (nA)
(A)
10
Ta=150˚C
25˚C
106
Ta=150˚C
Average forward current PD(AV) (W)
107
25
t0 t1
20
IF
100˚C
Forward current
Reverse current
1
105
15
t0/t1=1/6 1/3 1/2 DC
104 25˚C 103
10
0.
1
5
0.
01 0 0.
4 0.
8 1.
2 VF 1.
6 (V) 2.
0 Forward voltage
102 0 50 100 150 200 250 300 Reverse voltage VR (V)
0 0 2 4 6 8 10 12 Average forward current IF(AV) (A)
IF(AV) – TC
12 t0/t1=1/2
Thermal resistance Rth (˚C/W)
Rth(t) – t
102 Without heat sink
(A)
10
1/3 1/6 8
DC
Average forward current
IF(AV)
10
6
1
4
10–1
2 t0 t1 0 30 50 100 TC (˚C) 150
10...
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