Silicon planar type
Description
Switching Diodes
MA4X174
Silicon planar type
Unit : mm
For small power rectification and surge absorption
0.
65 ± 0.
15
2.
8 − 0.
3 1.
5 − 0.
05
+ 0.
25
+ 0.
2
0.
65 ± 0.
15
0.
95
0.
2
Repetitive peak reverse voltage Non-repetitive peak forward surge current Output current*1 Repetitive peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature
VRRM VRSM IO IFRM IFSM Tj Tstg
250 300 100 225 500 125 −55 to +125
V V mA mA mA °C °C
1.
1
0.
4 ± 0.
2
1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M2Q Internal Connection
4 3 1 2
Note) *1 : Value in single diode used *2 : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF VR = 200 V IF = 100 mA Conditions Min Typ Max 1.
0 1.
3 Unit µA V
Note) 1.
Rated input/output frequency: 3 MHz
0 to 0.
1
0.
1 to 0.
3
0.
8
Reverse voltage (DC)
VR
200
V
0.
16 − 0.
06
+ 0.
2 − 0.
1
+ 0.
1
Parameter
Symbol
Rating
Unit
0.
6 − 0
I Absolute Maximum Ratings Ta = 25°C
+ 0.
1
3
0.
4 − 0.
05
• Two isolated elements contained in one package, allowing highdensity mounting • High voltage (VR: 200 V) rectification is possible
0.
5 R
1.
9 ± 0.
2 2.
9 − 0.
05 0.
95
4
0.
5
1
+ 0.
2
2
+ 0.
1
0.
4 − 0.
05 1.
45
+ 0.
1
I Features
1
MA4X174
IF V F
1 000
100
Switching Diodes
IR V R
Ta = 125°C
1.
6 1.
4
VF Ta
100
10
Forward current IF (mA)
Forward voltage VF (V)
Reverse current IR (nA)
1.
2 1.
0 0.
8 0.
6 0.
4 0.
2 IF = 100 mA 10 mA 3 mA
10
1
75°C
1 Ta = 125°C 75°C 25°C 0.
1 − 20°C
0.
1 25°C 0.
01
0.
01
0.
001
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
0
40
80
120
160
200
240
0 −40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR Ta
100 VR = 200 V 100 V 10 V
2.
4
Ct VR
1 000 f = 1 MHz Ta = 25°C 300
IF(surge) tW
Ta = 25°C
IF(surge) tW
10
Terminal capacitance Ct (pF)
2.
0
Forward surge current IF(surge) (A)
Reverse current IR (...
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