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PHB3N60E

NXP

PowerMOS transistors Avalanche energy rated


Description
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHP3N60E, PHB3N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 2.8 A RDS(ON) ≤ 4.4 Ω s GENERAL DESCRIPTION N...



NXP

PHB3N60E

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