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M5M5V208KV-10LL-W

Mitsubishi

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM


M5M5V208KV-10LL-W
M5M5V208KV-10LL-W

PDF File M5M5V208KV-10LL-W PDF File


Description
'97.
3.
21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L-W , -85L -W, -10L-W , -12L-W , -70LL-W, -85LL-W, -10LL-W, -12LL-W 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology.
The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low power static RAM.
The M5M5V208 is designed for memory applications where high reliability, large storage, simple interfacing and battery back-up are important design objectives.
The M5M5V208VP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).
Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend type package).
Using both types of devices, it becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW) A17 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 DQ1 13 DQ2 14 DQ3 15 (0V)GND 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 FEATURE Type M5M5V208FP,VP,RV,KV,KR-70L M5M5V208FP,VP,RV,KV,KR-85L M5M5V208FP,VP,RV,KV,KR-10L M5M5V208FP,VP,RV,KV,KR-12L M5M5V208FP,VP,RV,KV,KR-70LL M5M5V208FP,VP,RV,KV,KR-85LL M5M5V208FP,VP,RV,KV,KR-10LL M5M5V208FP,VP,RV,KV,KR-12LL Access Power supply current time Active Stand-by (max) (max) (max) 70ns 85ns 100ns 120ns 70ns 85ns 100ns 120ns 27mA (Vcc=3.
6V) VCC(3V) A15 S2 W A13 A8 A9 A11 OE A10 S1 DQ8 DQ7 DQ6 DQ5 DQ4 Outline 32P2M-A(FP) 60µA (Vcc=3.
6V) 10µ A (Vcc=3.
6V) • Single 2.
7 ~ 3.
6V power supply • W-version: operating temperature of -20 to +70°C • No clocks, No refresh • All inputs and outputs are TTL compatible.
• Easy memory expansion and power down by S1 & S2 • Data retention supply voltage=2.
0V • Three-state outputs: OR-tie capability • OE prevents data contention in the I/O bus • Common Data I/O • Battery...



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