NPN/NPN resistor-equipped transistors
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH4 NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open
Preliminary specification 2001 Sep 14
Philips Semiconductors
Preliminary specification
NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open
FEATURES • 300 mW total power dissipation • Very small 1.
6 mm × 1.
2 mm × 0.
55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board space • Reduces pick and place costs.
APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.
DESCRIPTION NPN resistor-equipped double transistor in a SOT666 plastic package.
MARKING TYPE NUMBER PEMH4 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2
MBK120
PEMH4
QUICK REFERENCE DATA SYMBOL VCEO ICM TR1 TR2 R1 PARAMETER collector-emitter voltage peak collector current NPN NPN bias resistor MAX.
50 100 − − 10 UNIT V mA − − kΩ
handbook, halfpage 6
5
4
6
5
4
R1 TR1 R1 TR2
1
Top view
2
3
MAM453
1
2
3
Fig.
1 MARKING CODE H4
Simplified outline (SOT666) and symbol.
2, 5 1, 4
6, 3
Fig.
2 Equivalent inverter symbol.
2001 Sep 14
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per transistor VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1.
Transistor mounted on an FR4 printed-circuit board.
2.
The only recommended soldering method is reflow soldering.
PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 VALUE 416 total power dissipation Tamb ≤ 25 °C; note 1 − 300 collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collec...
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