256 K (32768 words X 8 bits) Pseudo-SRAM
Description
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits.
By using memory cells each composed of a single transistor and capacitor, together with peripheral CMOS circuitry, this series achieves ease of use with high density, high speed, and low power dissipation.
The LC33832 series can easily accomplish auto-refresh and self-refresh by means of OE/RFSH input.
As with asynchronous static RAM, WE input uses a system for incorporating input data at the WE rise, thereby facilitating interfacing with a microcomputer.
The LC33832 series features pin compatibility with 256 K static RAM (the LC36256A series), and available packages are the standard 28-pin DIP with widths of 600 mil or 300 mil, and the SOP with a width of 450 mil.
CE-only refresh can be accomplished by selecting address 256 (A0 to A7) within 4 ms.
Package Dimensions
unit: mm 3012A-DIP28
[LC33832P, PL]
SANYO: DIP28
Features
• • • • • • • • 32768 words × 8 bits configuration Single 5 V ±10% power supply All input and output (I/O) TTL compatible Fast access times and low power dissipation 4 ms refresh using 256 refresh cycle CE-only refresh, auto-refresh, and self-refresh Low-power version: 100 µA self-refresh current Package DIP28-pin (600 mil) plastic package: LC33832P, PL DIP28-pin (300 mil) plastic package: LC33832S, SL SOP28-pin (450 mil) plastic package: LC33832M, ML
unit: mm 3133-DIP28
[LC33832S, SL]
SANYO: DIP28
• CE access time/OE access time/Cycle time/Current drain
Parameter CE access time OE access time Cycle time Current drain Operating Standby LC33832P, S, M, PL, SL, ML -70 70 ns 30 ns 115 ns 65 mA -80 80 ns 35 ns 130 ns 60 mA 1 mA/100 µA (L version) -10 100 ns 40 ns 160 ns 50 mA
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