Nch POWER MOSFET - Mitsubishi
Description
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
FS16SM-5
OUTLINE DRAWING
15.
9MAX.
Dimensions in mm 4.
5 1.
5
r
2
2
4
20.
0
φ 3.
2
5.
0
1.
0 q 5.
45 w e 5.
45
19.
5MIN.
4.
4
0.
6
2.
8
4 wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS 250V ¡rDS (ON) (MAX) .
.
0.
25Ω ¡ID 16A
TO-3P
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 ±30 16 48 125 –55 ~ +150 –55 ~ +150 4.
8
Unit V V A A W °C °C g
Feb.
1999
Typical value
MITSUBISHI Nch POWER MOSFET
FS16SM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min.
250 ±30 — — 2 — — 6.
5 — — — — — — — — — Typ.
— — — — 3 0.
19 1.
5 10.
0 1050 220 45 20 40 110 50 1.
5 — Max.
— — ±10 1 4 0.
25 2.
0 — — — — — — — — 2.
0 1.
00
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay ...
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