Nch POWER MOSFET - Mitsubishi
Description
MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
FS16KM-9
OUTLINE DRAWING
10 ± 0.
3 6.
5 ± 0.
3 3 ± 0.
3
Dimensions in mm
2.
8 ± 0.
2
15 ± 0.
3
φ 3.
2 ± 0.
2
14 ± 0.
5
3.
6 ± 0.
3
1.
1 ± 0.
2 1.
1 ± 0.
2 0.
75 ± 0.
15
0.
75 ± 0.
15
2.
54 ± 0.
25
2.
54 ± 0.
25 4.
5 ± 0.
2 q GATE w DRAIN e SOURCE
1 2 3 2.
6 ± 0.
2
w
¡VDSS 450V ¡rDS (ON) (MAX) .
.
0.
45Ω ¡ID .
.
.
.
16A ¡Viso 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 450 ±30 16 48 40 –55 ~ +150 –55 ~ +150 2000 2.
0
Unit V V A A W °C °C Vrms g
Feb.
1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS16KM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min.
450 ±30 — — 2 — — 6.
0 — — — — — — — — — Typ.
— — — — 3 0.
35 2.
80 8.
0 1700 230 40 30 50 170 60 1.
5 — Max.
— — ±10 1 4 0.
45 3.
60 — — — — — — — — 2.
0 3.
13
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage...
Similar Datasheet
