Nch POWER MOSFET
Description
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
FS10VSJ-2
OUTLINE DRAWING
1.
5MAX.
Dimensions in mm
r
10.
5MAX.
4.
5 1.
3
1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5
3.
0 +0.
3 –0.
5
0 –0
+0.
3
1 5 0.
8
B
0.
5
q w e wr
2.
6 ± 0.
4
¡4V DRIVE ¡VDSS .
.
.
.
100V ¡rDS (ON) (MAX) .
0.
19Ω ¡ID .
.
.
10A ¡Integrated Fast Recovery Diode (TYP.
) .
.
95ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ± 20 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 1.
2
4.
5
Unit V V A A A A A W °C °C g
Feb.
1999
L = 100µH
(1.
5)
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, V GS = 4V ID = 5A, V GS = 10V ID = 5A, V DS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min.
100 — — 1.
0 — — — — — — — — — — — — — — Typ.
— — — 1.
5 0.
14 0.
16 0.
70 13 800 125 45 14 15 65 40 1.
0 — 95 Max.
— ±0.
1 0.
1 2.
0 0.
19 0.
21 0.
95 — — — — — — — — 1.
5 4.
17 —
Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-sour...
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